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Simulations on Hybrid Plasmonic Waveguides

Published: at 12:39 AM (8 min read)

This post is about some simulations I learned to make over the past couple of weeks. Check out my the part 1 post for a more detailed overview of the topic, but I’ll be providing context here as well. This is my first time attempting to embedd Julia simulations in my portfolio, so bear with me. All of the assumptions I made (apart from a couple, which are noted) are based of off R.F. Oulton et al. (Nature Photonics, 2008).

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Structure of the HPW

A hybrid plasmonic waveguide (HPW) consists of a high-index dielectric waveguide placed very close to a metal surface with a thin low-index space (gap) in between. In the case I’ll be studying , the strucutre is a silicon (Si) nanowire (high permittivity) seperated from a flat silver (Ag) substrate by a nanoscale silicon dioxide (SiO2). Light is guided by the hybrid mode that arises from coupling the dielectric waveguide mode in the Si core and the surface plasmon-polariton (SPP) mode at the metal surface. This coupling concentrates the electromagnetic energy in the gap region (like a capacitor) between the metal and dielectric. The benefit is a deep-subwavelegnth confinitement, where the mode area can be 50-100 times smaller than the diffraction limit, while much of the field resides in the dielectric, resulting in lower ohmic losses.

The tradeoff, however, is small gaps increase propagation loss. For example, with a very thin gap (h = 5 nm), the mode area can be  λ2/400~\lambda^2/400, but propagation lengths drop to tens of microns. With larger gaps, the confinement is weaker (~λ2/40\lambda^2/40), but propgation lengths are upwards of 100μm100 \mu m

Geometry and parameters

In my simulation, I modeled a Si nanowire of diameter dd sitting on a SiO2 film of thickness hh above a ‘thick’ silver substrate (basically an ‘infinite’ metal with respect to other length scales). The nanowire in the cross-section is treated as a cylinder of diameter dd (or an equivalent square cross-section). The gap hh is the SiO2 thickness seperating the nanowire’s bottom from the metal. The simulation domain is the 2D cross-section (x-y plane) as shown below, with the z axis (into the screen) being the propagation direction. Outside the Si wire and gap, I take the surrounding medium to be air for simplicity (n ≈ 1).

Simulated cross-section field profile of the fundamental hybrid mode (power density W at x=0) for different gap sizes (h = 2, 10, 25 nm). The Si nanowire (green circle, diameter d) sits above an Ag substrate (gray) with a thin SiO₂ gap (white). The field is tightly confined in the nanoscale gap, with smaller gaps yielding higher peak intensity in the gap.(From R.F. Oulton et al. (Nature Photonics, 2008)) em-profiles

Operating wavelenght

I allowed the free-space wavelength λ\lambda in vacuum to be varied (for example, around telecom 1550 nm). This actually affects the metal’s permittivity and the mode properties (see below).

Material Models:

I need to use realistic frequency dependent permittivities. For silver (Ag), I did some research to find that a dispersive model is the most relevant. This is because silver’s optical resonance varies strongly with frequency, and this behavior is not well captured by constant permittivity. I found an optical constants model (Johnson & Christy 1972 data), or I could use the Drude/Lorentz model (I am currently reading through Ashcroft & Mermin’s Solid State Physics, will be making notes soon)!

The MaxwellFDFD.jl package conveniently includes built-in frequency dependent dielectric constants for common materials in nanophotonics from standard references! So, we can obtain ϵ(ω)\epsilon (\omega) for Ag at the selected λ\lambda (for example, at λ\lambda = 1550 nm, silver’s permittivity is about ϵAG129+3.3i\epsilon_{AG} \approx -129 + 3.3i). For Si, I assumed constant index since it varies slowly in IR - e.g. n3.48n \approx 3.48 at 1.55μ1.55\mum (ϵSi12.1\epsilon_{Si} \approx 12.1). For the silica dielectric, I used n1.444n \approx 1.444 at 1.55μ1.55\mum (ϵSiO22.085\epsilon_{SiO_2} \approx 2.085). I think that using a fixed n for the dielectrics is a good approximation, mostly since I was a bit lazy to interpolate between data.

Simulation Tools + Approach

I built the simulatino in Julia using open-source EM solvers. Here’s a list of important tools:

Discretization

I defined a grid (spacing of 5nm) over the cross section. This is fine enough to resolve the ~10nm gap and fields. I surrounded the structure with PML (perfectly matched layer) absorbing boundaries to simulate an open domain. The metal substrate is treaded as occupying y < 0. I used a PML thickness of 100 nm (which is just 20 grid cells) at each boundary. In FDFD.jl, the Grid can be defined with PML cell counts (like grid = Grid(Δ, [N_pml_x, N_pml_y], [x_min, x_max], [y_min, y_max])).

Geometry Setup

Guided Mode (Frequency-Domain Solution)

To obtain the modal fields nad the propagation constant, we first solve for Maxwell’s equations in the frequency domain for a guided mode solution. In a frequency-domain approach, we should first look for the E(x,y) and H(x,y) fields that satisfy the source-free Maxwell curl equations with some assumed propgation. For example, we can let E(x,y,z)=E(x,y)eiBzE(x,y,z) = E(x,y) \cdot e^{i\Beta z}. This leads to an eigenvalue problem for B\Beta. MaxwellFDFD.jl includes a waveguided mode solver for this purpose, and FDFD.jl can compute modes by excitingb a mode source. I chose to use FDFD.jl:

Mode Excitations:

I set up a small simulation where teh waveguide extends a short length in z (a couple hundred nm) with PML on both ends. Then, I used a modal source at one end: FDFD.jl provides an addMode! function to excited the waveguide’s eigenmode. This internally solves an eigenvalue problem on a cross-section to find the mode field and B\Beta, then it injects that field as a source. The code looks like this:

using FDFD, FDFDViz, GeometryPrimitives
add_mode!(dev, Mode(TE, ẑ, neff_guess, Point(z0, 0.0), width))
field = solve(dev)

‘Mode(polarization, direction, neff_guess, location, width)’ specifies the modes to find. For example, we could choose the quasi-TE polarization (primarily horizontal E-field) or the quasi-TM polarization (primarily vertical E-field across gap). The hybrid fundamental mode in our structure has a strong vertical E_field in the gap, which would correspond to a TM-like polarization. The addMode! cal will perform an eigenmode solve on the cross-section and then adds a current source that will excite the compound mode. The solver then finds the steady-state field pattern field along the propagation direction.

Boundary Conditions

At the top and sides, I set PML absorbing layers. At the metal and symmetry plane (symmetric about x=0), we can exploit symmetry to reduce some computation. I was unsure about whether the E-field across the center is symmetric in EyE_y or ExE_x. Thus, I thought it would be safe to initially simulate the full cross section to let the solver find the symmetric mode.

After solving, we can extract the effective index neff=B/k0n_{eff} = \Beta/k_0. This tells us the confinement (neffn_{eff} lies in between the index of Si and that of the SPP mode at the interface). We can also get the modal field distribution on the 2D grid E(x,y,z)E(x,y,z) and H(x,y,z)H(x,y,z).

Simulation go Brr…